SiC Schottky diodes for harsh environment space applications P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ...
IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010
89 2010 Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications LA Navarro, X Perpiñà, P Godignon, J Montserrat, V Banu, M Vellvehi, ...
IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013
73 2013 SiC integrated circuit control electronics for high-temperature operation M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ...
IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014
58 2014 Reliability and safety in railway X Perpinya
BoD–Books on Demand, 2012
51 2012 Irradiance-based emissivity correction in infrared thermography for electronic applications M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà
Review of scientific instruments 82 (11), 114901, 2011
50 2011 Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
45 2010 Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
37 2017 Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
35 2002 Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ...
IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008
32 2008 Thermal resistance investigations on new leadframe-based LED packages and boards B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ...
Microelectronics Reliability 53 (8), 1084-1094, 2013
30 2013 Internal infrared laser deflection system: a tool for power device characterization X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ...
Measurement Science and Technology 15 (5), 1011, 2004
29 2004 P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
28 2017 Coupled electro-thermal simulation of a DC/DC converter M Vellvehi, X Jordà, P Godignon, C Ferrer, J Millán
Microelectronics Reliability 47 (12), 2114-2121, 2007
26 2007 Reduced-order thermal behavioral model based on diffusive representation B Allard, X Jorda, P Bidan, A Rumeau, H Morel, X Perpina, M Vellvehi, ...
IEEE Transactions on Power Electronics 24 (12), 2833-2846, 2009
24 2009 Reduction of self-heating effect on SOIM devices J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
24 2002 Power-substrate static thermal characterization based on a test chip X Jorda, X Perpina, M Vellvehi, J Coleto
IEEE Transactions on Device and Materials reliability 8 (4), 671-679, 2008
23 2008 A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits J Altet, E Aldrete-Vidrio, D Mateo, X Perpiñà, X Jordà, M Vellvehi, J Millán, ...
Measurement Science and Technology 19 (11), 115704, 2008
22 2008 Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC R Perez, N Mestres, M Vellvehi, P Godignon, J Millan
Semiconductor science and technology 21 (5), 670, 2006
22 2006 Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications J Barcena, J Maudes, M Vellvehi, X Jorda, I Obieta, C Guraya, L Bilbao, ...
Acta Astronautica 62 (6-7), 422-430, 2008
21 2008 Channeling implantations of E Morvan, P Godignon, M Vellvehi, A Hallén, M Linnarsson, ...
Applied physics letters 74 (26), 3990-3992, 1999
21 1999 