Miquel Vellvehi
Miquel Vellvehi
Dirección de correo verificada de imb-cnm.csic.es
Citado por
Citado por
SiC Schottky diodes for harsh environment space applications
P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ...
IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010
Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications
LA Navarro, X Perpiñà, P Godignon, J Montserrat, V Banu, M Vellvehi, ...
IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013
SiC integrated circuit control electronics for high-temperature operation
M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ...
IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014
Irradiance-based emissivity correction in infrared thermography for electronic applications
M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà
Review of scientific instruments 82 (11), 114901, 2011
Reliability and safety in railway
X Perpinya
BoD–Books on Demand, 2012
Long-term reliability of railway power inverters cooled by heat-pipe-based systems
X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet
IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs
M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
Study of novel techniques for reducing self-heating effects in SOI power LDMOS
J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes
P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ...
IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008
Thermal resistance investigations on new leadframe-based LED packages and boards
B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ...
Microelectronics Reliability 53 (8), 1084-1094, 2013
P-GaN HEMTs drain and gate current analysis under short-circuit
M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
Internal infrared laser deflection system: a tool for power device characterization
X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ...
Measurement Science and Technology 15 (5), 1011, 2004
Coupled electro-thermal simulation of a DC/DC converter
M Vellvehi, X Jordà, P Godignon, C Ferrer, J Millán
Microelectronics Reliability 47 (12), 2114-2121, 2007
Reduced-order thermal behavioral model based on diffusive representation
B Allard, X Jorda, P Bidan, A Rumeau, H Morel, X Perpina, M Vellvehi, ...
IEEE Transactions on Power Electronics 24 (12), 2833-2846, 2009
Reduction of self-heating effect on SOIM devices
J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
Power-substrate static thermal characterization based on a test chip
X Jorda, X Perpina, M Vellvehi, J Coleto
IEEE Transactions on Device and Materials reliability 8 (4), 671-679, 2008
A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits
J Altet, E Aldrete-Vidrio, D Mateo, X Perpiñà, X Jordà, M Vellvehi, J Millán, ...
Measurement Science and Technology 19 (11), 115704, 2008
Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC
R Perez, N Mestres, M Vellvehi, P Godignon, J Millan
Semiconductor science and technology 21 (5), 670, 2006
Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications
J Barcena, J Maudes, M Vellvehi, X Jorda, I Obieta, C Guraya, L Bilbao, ...
Acta Astronautica 62 (6-7), 422-430, 2008
Channeling implantations of into 6H silicon carbide
E Morvan, P Godignon, M Vellvehi, A Hallén, M Linnarsson, ...
Applied physics letters 74 (26), 3990-3992, 1999
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