| Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ... Nature Photonics 13 (10), 683-686, 2019 | 80 | 2019 |
| InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan Optics express 24 (21), 24242-24247, 2016 | 48 | 2016 |
| Excess noise characteristics of thin AlAsSb APDs J Xie, S Xie, RC Tozer, CH Tan IEEE transactions on electron devices 59 (5), 1475-1479, 2012 | 39 | 2012 |
| InGaAs/InAlAs single photon avalanche diode for 1550 nm photons X Meng, S Xie, X Zhou, N Calandri, M Sanzaro, A Tosi, CH Tan, JS Ng Royal Society Open Science 3 (3), 150584, 2016 | 38 | 2016 |
| Demonstration of large ionization coefficient ratio in AlAs0. 56Sb0. 44 lattice matched to InP X Yi, S Xie, B Liang, LW Lim, X Zhou, MC Debnath, DL Huffaker, CH Tan, ... Scientific reports 8 (1), 1-6, 2018 | 28 | 2018 |
| InGaAs/InAlAs avalanche photodiode with low dark current for high-speed operation S Xie, S Zhang, CH Tan IEEE Photonics Technology Letters 27 (16), 1745-1748, 2015 | 25 | 2015 |
| AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage S Xie, CH Tan IEEE Journal of Quantum Electronics 47 (11), 1391-1395, 2011 | 25 | 2011 |
| Low noise avalanche photodiodes incorporating a 40 nm AlAsSb avalanche region CH Tan, S Xie, J Xie IEEE Journal of Quantum Electronics 48 (1), 36-41, 2011 | 23 | 2011 |
| Temperature dependence of impact ionization in InAs IC Sandall, JS Ng, S Xie, PJ Ker, CH Tan Optics express 21 (7), 8630-8637, 2013 | 21 | 2013 |
| Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown X Zhou, CH Tan, S Zhang, M Moreno, S Xie, S Abdullah, JS Ng Royal Society open science 4 (5), 170071, 2017 | 16 | 2017 |
| Potential materials for avalanche photodiodes operating above 10Gb/s CH Tan, JS Ng, S Xie, JPR David 2009 4th International Conference on Computers and Devices for Communication …, 2009 | 15 | 2009 |
| High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer J Huang, C Zhao, B Nie, S Xie, DCM Kwan, X Meng, Y Zhang, ... Photonics Research 8 (5), 755-759, 2020 | 12 | 2020 |
| Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP X Jin, S Xie, B Liang, X Yi, H Lewis, LW Lim, Y Liu, BK Ng, DL Huffaker, ... IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 11 | 2021 |
| Nat. Photonics 13, 683 (2019) X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ... | 8 | |
| Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes S Xie University of Sheffield, 2012 | 5 | 2012 |
| InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product X Zhou, S Xie, S Zhang, JS Ng, CH Tan 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 4 | 2016 |
| High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes IC Sandall, S Xie, JJ Xie, CH Tan Optics letters 36 (21), 4287-4289, 2011 | 4 | 2011 |
| 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode S Xie, H Li, J Ahmed, DL Huffaker IEEE Photonics Journal 12 (4), 1-8, 2020 | 2 | 2020 |
| InAs/InAsP core/shell nanowire photodiode on a Si substrate S Xie, H Kim, WJ Lee, AC Farrell, JPR David, DL Huffaker Nano Adv. 1 (3), 110-114, 2016 | 2 | 2016 |
| Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode X Jin, HIJ Lewis, X Yi, S Xie, B Liang, Q Tian, DL Huffaker, CH Tan, ... Optics Express 31 (20), 33141-33149, 2023 | 1 | 2023 |
