| Electronic switching in phase-change memories A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez IEEE Transactions on Electron Devices 51 (3), 452-459, 2004 | 754 | 2004 |
| Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004 | 544 | 2004 |
| Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ... IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004 | 505 | 2004 |
| Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez IEEE Transactions on Electron Devices 51 (5), 714-719, 2004 | 438 | 2004 |
| Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez IEEE Electron Device Letters 25 (10), 684-686, 2004 | 365 | 2004 |
| Scaling analysis of phase-change memory technology A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003 | 339 | 2003 |
| Electrothermal and phase-change dynamics in chalcogenide-based memories AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 335 | 2004 |
| Non-volatile memory technologies: emerging concepts and new materials R Bez, A Pirovano Materials Science in Semiconductor Processing 7 (4-6), 349-355, 2004 | 303 | 2004 |
| Threshold switching and phase transition numerical models for phase change memory simulations A Redaelli, A Pirovano, A Benvenuti, AL Lacaita Journal of Applied Physics 103 (11), 2008 | 269 | 2008 |
| Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ... Frontiers in neuroscience 10, 56, 2016 | 237 | 2016 |
| 4-Mb MOSFET-selected phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, E Buda, G Casagrande, ... Proceedings of the 30th European Solid-State Circuits Conference, 207-210, 2004 | 236 | 2004 |
| An 8Mb demonstrator for high-density 1.8 V phase-change memories F Bedeschi, C Resta, O Khouri, E Buda, L Costa, M Ferraro, F Pellizzer, ... 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004 | 200 | 2004 |
| A 90nm phase change memory technology for stand-alone non-volatile memory applications F Pellizzer, A Benvenuti, B Gleixner, Y Kim, B Johnson, M Magistretti, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 122-123, 2006 | 179 | 2006 |
| Analysis of phase distribution in phase-change nonvolatile memories D Ielmini, AL Lacaita, A Pirovano, F Pellizzer, R Bez IEEE Electron Device Letters 25 (7), 507-509, 2004 | 151 | 2004 |
| 4-Mb MOSFET-selected/spl mu/trench phase-change memory experimental chip F Bedeschi, R Bez, C Boffino, E Bonizzoni, EC Buda, G Casagrande, ... IEEE journal of solid-state circuits 40 (7), 1557-1565, 2005 | 146 | 2005 |
| Amorphization dynamics of Ge2Sb2Te5 films upon nano-and femtosecond laser pulse irradiation J Siegel, W Gawelda, D Puerto, C Dorronsoro, J Solis, CN Afonso, ... Journal of Applied Physics 103 (2), 2008 | 113 | 2008 |
| A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer Journal of Applied Physics 105 (8), 2009 | 102 | 2009 |
| Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010 | 98 | 2010 |
| Crystallization and phase separation in thin films S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez Journal of applied physics 94 (7), 4409-4413, 2003 | 93 | 2003 |
| Method for multilevel programming of phase change memory cells using a percolation algorithm F Pellizzer, A Pirovano US Patent 7,639,526, 2009 | 89 | 2009 |
