Richard Andrew Hogg
Richard Andrew Hogg
Professor of Photonic Devices and Systems, James Watt School of Engineering, The University of
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IEEE Photonics Technol. Lett
HY Liu, DT Childs, TJ Badcock, KM Groom, IR Sellers, M Hopkinson, ...
Google Scholar, 2005
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
H Liu, T Wang, Q Jiang, R Hogg, F Tutu, F Pozzi, A Seeds
Nature Photonics 5 (7), 416-419, 2011
Detection of single photons using a field-effect transistor gated by a layer of quantum dots
AJ Shields, MP O’sullivan, I Farrer, DA Ritchie, RA Hogg, ML Leadbeater, ...
Applied Physics Letters 76 (25), 3673-3675, 2000
Long-wavelength light emission and lasing from quantum dots covered by a GaAsSb strain-reducing layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, P Navaretti, ...
Applied Physics Letters 86 (14), 143108, 2005
Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
K Suzuki, RA Hogg, Y Arakawa
Journal of applied physics 85 (12), 8349-8352, 1999
High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
HY Liu, DT Childs, TJ Badcock, KM Groom, IR Sellers, M Hopkinson, ...
IEEE photonics technology letters 17 (6), 1139-1141, 2005
-doped quantum-dot laser with a low threshold current density and high differential efficiency
HY Liu, SL Liew, T Badcock, DJ Mowbray, MS Skolnick, SK Ray, TL Choi, ...
Applied Physics Letters 89 (7), 073113, 2006
Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, M Hopkinson, ...
Journal of applied physics 73 (10), 5163-5172, 1993
Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells
SK Ray, KM Groom, MD Beattie, HY Liu, M Hopkinson, RA Hogg
Integrated Optoelectronic Devices 2006, 612907-612907-6, 2006
Self-assembled quantum-dot superluminescent light-emitting diodes
ZY Zhang, RA Hogg, XQ Lv, ZG Wang
Advances in Optics and Photonics 2 (2), 201-228, 2010
Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111) B GaAs
AS Pabla, JL Sanchez‐Rojas, J Woodhead, R Grey, JPR David, GJ Rees, ...
Applied Physics Letters 63 (6), 752-754, 1993
1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser
ZY Zhang, AEH Oehler, B Resan, S Kurmulis, KJ Zhou, Q Wang, ...
Scientific reports 2, 477, 2012
Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers
RR Alexander, DTD Childs, H Agarwal, KM Groom, HY Liu, M Hopkinson, ...
IEEE Journal of Quantum Electronics 43 (12), 1129-1139, 2007
Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111) B-grown (In, Ga) As/GaAs multiple quantum wells
RA Hogg, TA Fisher, ARK Willcox, DM Whittaker, MS Skolnick, ...
Physical Review B 48 (11), 8491, 1993
Band gap of ‘‘completely disordered’’ Ga0.52In0.48P
MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, JE Williams, K Meehan, ...
Applied physics letters 66 (23), 3185-3187, 1995
Single photon detection with a quantum dot transistor
AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ...
Japanese Journal of Applied Physics 40 (3S), 2058, 2001
Quantum dot superluminescent diodes for optical coherence tomography: device engineering
PDL Greenwood, DTD Childs, K Kennedy, KM Groom, M Hugues, ...
IEEE Journal of Selected Topics in Quantum Electronics 16 (4), 1015-1022, 2010
Rapid radiative decay of charged excitons
D Sanvitto, RA Hogg, AJ Shields, DM Whittaker, MY Simmons, DA Ritchie, ...
Physical Review B 62 (20), R13294, 2000
Valence-band splitting in ordered Ga 0.5 In 0.5 P measured by polarized photoluminescence excitation spectroscopy
DJ Mowbray, RA Hogg, MS Skolnick, MC DeLong, SR Kurtz, JM Olson
Physical Review B 46 (11), 7232, 1992
Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
RA Hogg, K Suzuki, K Tachibana, L Finger, K Hirakawa, Y Arakawa
Applied physics letters 72 (22), 2856-2858, 1998
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