Zlatko Sitar
Zlatko Sitar
Kobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State
Verified email at ncsu.edu
Title
Cited by
Cited by
Year
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
4461989
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
2882018
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
2401988
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy
Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990
1481990
Seeded growth of AlN bulk single crystals by sublimation
R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
1392002
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
1372011
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1342011
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 043510, 2010
1262010
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1232009
Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications
BS Lim, A Rahtu, P de Rouffignac, RG Gordon
Applied Physics Letters 84 (20), 3957-3959, 2004
1202004
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
1192012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
1152013
The growth and optical properties of large, high-quality single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of Applied Physics 96 (10), 5870-5876, 2004
1132004
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1092012
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 1-6, 2013
1062013
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ...
Applied Physics Express 6 (9), 092103, 2013
1062013
Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire
Z Sitar, LL Smith, RF Davis
Journal of crystal growth 141 (1-2), 11-21, 1994
1051994
Sublimation growth and characterization of bulk aluminum nitride single crystals
CM Balkaş, Z Sitar, T Zheleva, L Bergman, R Nemanich, RF Davis
Journal of Crystal Growth 179 (3-4), 363-370, 1997
1041997
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1032012
Growth of AlN single crystalline boules
ZG Herro, D Zhuang, R Schlesser, Z Sitar
Journal of Crystal Growth 312 (18), 2519-2521, 2010
1032010
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