| Resistive memories for ultra-low-power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ... 2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014 | 112 | 2014 |
| Endurance/retention trade off in HfOx and TaOx based RRAM M Azzaz, E Vianello, B Sklenard, P Blaise, A Roule, C Sabbione, ... 2016 IEEE 8th international memory workshop (IMW), 1-4, 2016 | 48 | 2016 |
| Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching S Petzold, E Piros, R Eilhardt, A Zintler, T Vogel, N Kaiser, A Radetinac, ... Advanced Electronic Materials 6 (11), 2000439, 2020 | 29 | 2020 |
| Target design for the LMJ PA Holstein, M André, M Casanova, F Chaland, C Charpin, C Cherfils, ... Comptes Rendus de l'Académie des Sciences-Series IV-Physics 1 (6), 693-704, 2000 | 28 | 2000 |
| Target design for the LMJ PA Holstein, M André, M Casanova, F Chaland, C Charpin, C Cherfils, ... Comptes Rendus de l'Académie des Sciences-Series IV-Physics 1 (6), 693-704, 2000 | 28 | 2000 |
| Evolution of the target design for the MJ laser PA Holstein, F Chaland, C Charpin, JM Dufour, H Dumont, J Giorla, ... Laser and Particle Beams 17 (3), 403-413, 1999 | 28 | 1999 |
| 16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors L Grenouillet, N Castellani, A Persico, V Meli, S Martin, O Billoint, ... 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 23 | 2021 |
| Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories L Masoero, G Molas, F Brun, M Gély, JP Colonna, V Della Marca, O Cueto, ... 2011 International Electron Devices Meeting, 9.5. 1-9.5. 4, 2011 | 20 | 2011 |
| Study of the energy consumption optimization on RRAM memory array for SCM applications C Cagli, G Molas, M Harrand, S Bernasconi, C Charpin, K El Hajjam, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 19 | 2017 |
| Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3 M Azzaz, A Benoist, E Vianello, D Garbin, E Jalaguier, C Cagli, C Charpin, ... Solid-State Electronics 125, 182-188, 2016 | 19 | 2016 |
| Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization M Azzaz, A Benoist, E Vianello, D Garbin, E Jalaguier, C Cagli, C Charpin, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 266-269, 2015 | 18 | 2015 |
| Study of nanosecond laser annealing on silicon doped hafnium oxide film crystallization and capacitor reliability T Ali, R Olivo, S Kerdiles, D Lehninger, M Lederer, D Sourav, AS Royet, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 15 | 2022 |
| Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ... IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021 | 13 | 2021 |
| Emerging memory technologies: Challenges and opportunities B DeSalvo, V Sousa, L Perniola, C Jahan, S Maitrejean, JF Nodin, ... Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012 | 13 | 2012 |
| Method for manufacturing a double-gate electronic memory cell and associated memory cell C Charpin-Nicolle US Patent 9,117,702, 2015 | 11 | 2015 |
| Structural and electrical response of emerging memories exposed to heavy ion radiation T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ... ACS nano 16 (9), 14463-14478, 2022 | 9 | 2022 |
| Method for manufacturing a microelectronic device integrating a physical unclonable function provided by resistive memories, and said device C Charpin-Nicolle, F Pebay-Peyroula US Patent 11,444,040, 2022 | 9 | 2022 |
| Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories C Charpin-Nicolle, M Bonvalot, R Sommer, A Persico, ML Cordeau, ... Microelectronic Engineering 221, 111194, 2020 | 9 | 2020 |
| Double-gate electronic memory cell and method of manufacturing such a cell C Charpin-Nicolle US Patent 8,836,014, 2014 | 8 | 2014 |
| Nano‐characterization of switching mechanism in HfO2‐based oxide resistive memories by TEM‐EELS‐EDS T Dewolf, V Delaye, N Bernier, D Cooper, N Chevalier, H Grampeix, ... European Microscopy Congress 2016: Proceedings, 598-599, 2016 | 7 | 2016 |
