Seguir
Loredana VISCARDI
Loredana VISCARDI
Afiliación desconocida
Dirección de correo verificada de unisa.it
Título
Citado por
Citado por
Año
Temperature-dependent photoconductivity in two-dimensional MoS2 transistors
A Di Bartolomeo, A Kumar, O Durante, A Sessa, E Faella, L Viscardi, ...
Materials Today Nano 24, 100382, 2023
302023
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light
E Faella, K Intonti, L Viscardi, F Giubileo, A Kumar, HT Lam, K Anastasiou, ...
Nanomaterials 12 (11), 1886, 2022
242022
Black phosphorus unipolar transistor, memory, and photodetector
A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, S Sleziona, ...
Journal of Materials Science 58 (6), 2689-2699, 2023
202023
Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure
K Intonti, E Faella, L Viscardi, A Kumar, O Durante, F Giubileo, ...
Advanced Electronic Materials 9 (8), 2300066, 2023
192023
Optoelectronic memory in 2D MoS2 field effect transistor
A Kumar, E Faella, O Durante, F Giubileo, A Pelella, L Viscardi, K Intonti, ...
Journal of Physics and Chemistry of Solids 179, 111406, 2023
182023
Temperature dependent black phosphorus transistor and memory
A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, S Sleziona, ...
Nano Express 4 (1), 014001, 2023
172023
Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts
L Viscardi, K Intonti, A Kumar, E Faella, A Pelella, F Giubileo, S Sleziona, ...
physica status solidi (b) 260 (9), 2200537, 2023
112023
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2
K Intonti, E Faella, A Kumar, L Viscardi, F Giubileo, N Martucciello, ...
ACS Applied Materials & Interfaces 15 (43), 50302-50311, 2023
42023
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures
O Durante, K Intonti, L Viscardi, S De Stefano, E Faella, A Kumar, ...
ACS Applied Nano Materials 6 (23), 21663-21670, 2023
32023
Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory
A Pelella, K Intonti, L Viscardi, O Durante, D Capista, M Passacantando, ...
Journal of Physics and Chemistry of Solids 183, 111653, 2023
22023
Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors
L Viscardi, E Faella, K Intonti, F Giubileo, V Demontis, D Prete, V Zannier, ...
Materials Science in Semiconductor Processing 173, 108167, 2024
12024
Multilayer WS2 for low-power visible and near-infrared phototransistors
A Pelella, K Intonti, O Durante, A Kumar, L Viscardi, S De Stefano, ...
Discover Nano 19 (1), 1-10, 2024
2024
n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory
A Kumar, A Pelella, K Intonti, L Viscardi, O Durante, F Giubileo, P Romano, ...
Advanced Electronic Materials, 2400010, 2024
2024
The Second Quantum Revolution: Unexplored Facts and Latest News
K Intonti, L Viscardi, V Lamberti, A Matteucci, B Micciola, M Modestino, ...
Encyclopedia 4 (2), 630-671, 2024
2024
Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors
A Kumar, K Intonti, L Viscardi, O Durante, A Pelella, O Kharsah, ...
Materials Horizons, 2024
2024
Pressure-dependent photoconductivity in two dimensional ReS₂
K Intonti, E Faella, A Kumar, L Viscardi, F Giubileo, HT Lam, K Anastasiou, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 368-372, 2023
2023
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature
E Faella, L Viscardi, K Intonti, O Durante, A Pelella, MS Alghamdi, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 553-557, 2023
2023
InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications
L Viscardi, E Faella, K Intonti, F Giubileo, V Demontis, D Prete, V Zannier, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 773-777, 2023
2023
Effect of PMMA capping layer on black phosphorus field effect transistor
A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, O Durante, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 77-80, 2023
2023
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor
A Pelella, P Romano, K Intonti, L Viscardi, O Durante, D Capista, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 270-271, 2023
2023
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20