Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides S Barja, S Refaely-Abramson, B Schuler, DY Qiu, A Pulkin, S Wickenburg, ...
Nature communications 10, 3382, 2019
238 2019 Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity C Kastl, C Karnetzky, H Karl, AW Holleitner
Nature communications 6, 6617, 2015
190 2015 Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer B Schuler, DY Qiu, S Refaely-Abramson, C Kastl, CT Chen, S Barja, ...
Physical Review Letters 123 (7), 076801, 2019
169 2019 The role of chalcogen vacancies for atomic defect emission in MoS2 E Mitterreiter, B Schuler, A Micevic, D Hernangómez-Pérez, K Barthelmi, ...
Nature Communicaions 12, 3822, 2021
129 2021 How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain B Schuler, JH Lee, C Kastl, KA Cochrane, CT Chen, S Refaely-Abramson, ...
ACS nano 13 (9), 10520-10534, 2019
108 2019 Effects of Defects on Band Structure and Excitons in WS2 Revealed by Nanoscale Photoemission Spectroscopy C Kastl, RJ Koch, CT Chen, J Eichhorn, S Ulstrup, A Bostwick, C Jozwiak, ...
ACS nano 13 (2), 1284-1291, 2019
100 2019 Nanoscale imaging of charge carrier transport in water splitting photoanodes J Eichhorn, C Kastl, JK Cooper, D Ziegler, AM Schwartzberg, ID Sharp, ...
Nature communications 9 (1), 2597, 2018
85 2018 Electrically driven photon emission from individual atomic defects in monolayer WS2 B Schuler, KA Cochrane, C Kastl, E Barnard, E Wong, N Borys, ...
Science Advances 6 (38), eabb5988, 2020
82 2020 Atomistic defects as single-photon emitters in atomically thin MoS2 K Barthelmi, J Klein, A Hötger, L Sigl, F Sigger, E Mitterreiter, S Rey, ...
Applied Physics Letters 117 (7), 070501, 2020
66 2020 The important role of water in growth of monolayer transition metal dichalcogenides C Kastl, CT Chen, T Kuykendall, B Shevitski, TP Darlington, NJ Borys, ...
2D Materials 4 (2), 021024, 2017
60 2017 Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2 J Klein, L Sigl, S Gyger, K Barthelmi, M Florian, S Rey, T Taniguchi, ...
ACS Photonics 8 (2), 669-677, 2021
58 2021 Atomistic positioning of defects in helium ion treated single layer MoS2 E Mitterreiter, B Schuler, KA Cochrance, U Wurstbauer, A Weber-Bargioni, ...
Nano Letters 20 (6), 4437–4444, 2020
58 2020 Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy C Kastl, CT Chen, RJ Koch, B Schuler, TR Kuykendall, A Bostwick, ...
2D Materials 5 (4), 045010, 2018
55 2018 Blue-light-emitting color centers in high-quality hexagonal boron nitride B Shevitski, SM Gilbert, CT Chen, C Kastl, ES Barnard, E Wong, ...
Physical Review B 100 (15), 155419, 2019
51 2019 Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 van der Waals Heterodevices A Hötger, J Klein, K Barthelmi, L Sigl, F Sigger, W Männer, S Gyger, ...
Nano Letters 21 (2), 1040-1046, 2021
37 2021 Local photocurrent generation in thin films of the topological insulator C Kastl, T Guan, XY He, KH Wu, YQ Li, AW Holleitner
Applied Physics Letters 101 (25), 251110, 2012
37 2012 Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self‐limiting process for aspect ratio independent etching S Dallorto, A Goodyear, M Cooke, JE Szornel, C Ward, C Kastl, ...
Plasma Processes and Polymers, e1900051, 2019
36 2019 Resonant and bound states of charged defects in two-dimensional semiconductors M Aghajanian, B Schuler, KA Cochrane, JH Lee, C Kastl, JB Neaton, ...
Physical Review B 101 (8), 081201, 2020
28 2020 Light-field and spin-orbit-driven currents in van der Waals materials J Kiemle, P Zimmermann, AW Holleitner, C Kastl
Nanophotonics, 20200226, 2020
24 2020 Topological insulators as ultrafast auston switches in on-chip THz-circuits C Kastl, C Karnetzky, A Brenneis, F Langrieger, A Holleitner
IEEE Journal of Selected Topics in Quantum Electronics 23 (4), 1-5, 2017
24 2017