Tibault Reveyrand
Tibault Reveyrand
CNRS Engineer, XLIM
Dirección de correo verificada de xlim.fr - Página principal
TítuloCitado porAño
An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR
O Jardel, F De Groote, T Reveyrand, JC Jacquet, C Charbonniaud, ...
IEEE Transactions on Microwave Theory and Techniques 55 (12), 2660-2669, 2007
2292007
High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers
M Roberg, T Reveyrand, I Ramos, EA Falkenstein, Z Popovic
Transactions on Microwave Theory and Techniques 60 (12), 4043-4052, 2012
1432012
State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers
S Piotrowicz, E Morvan, R Aubry, S Bansropun, T Bouvet, E Chartier, ...
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC'08. IEEE, 1-4, 2008
522008
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
S Piotrowicz, Z Ouarch, E Chartier, R Aubry, G Callet, D Floriot, ...
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 505-508, 2010
502010
Frequency tunable antenna using a magneto-dielectric material for DVB-H application
L Huitema, T Reveyrand, JL Mattei, E Arnaud, C Decroze, T Monediere
IEEE Transactions on Antennas and Propagation 61 (9), 4456-4466, 2013
482013
A drain-lag model for AlGaN/GaN power HEMTs
O Jardel, F De Groote, C Charbonniaud, T Reveyrand, JP Teyssier, ...
2007 IEEE/MTT-S international microwave symposium, 601-604, 2007
422007
Measurement based modeling of power amplifiers for reliable design of modern communication systems
A Soury, E Ngoya, JM Nebus, T Reveyrand
IEEE MTT-S International Microwave Symposium Digest, 2003 2, 795-798, 2003
302003
Modeling of trap induced dispersion of large signal dynamic characteristics of GaN HEMTs
O Jardel, S Laurent, T Reveyrand, R Quéré, P Nakkala, A Martin, ...
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
292013
A novel experimental noise power ratio characterization method for multicarrier microwave power amplifiers
T Reveyrand, D Barataud, J Lajoinie, M Campovecchio, JM Nebus, ...
55th ARFTG Conference Digest 37, 1-5, 2000
282000
Two-stage GaN HEMT amplifier with gate–source voltage shaping for efficiency versus bandwidth enhancements
A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ...
IEEE Transactions on Microwave Theory and Techniques 59 (3), 699-706, 2010
272010
High-efficiency X-band MMIC GaN power amplifiers operating as rectifiers
M Litchfield, S Schafer, T Reveyrand, Z Popović
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014
262014
Time-reversal duality of high-efficiency RF power amplifiers
T Reveyrand, I Ramos, Z Popović
Electronics Letters 48 (25), 1607-1608, 2012
262012
Time-domain calibrated measurements of wideband multisines using a large-signal network analyzer
M El Yaagoubi, G Neveux, D Barataud, T Reveyrand, JM Nebus, ...
IEEE Transactions on Microwave Theory and Techniques 56 (5), 1180-1192, 2008
262008
A calibrated time domain envelope measurement system for the behavioral modeling of power amplifiers
T Reveyrand, C Mazière, JM Nébus, R Quéré, A Mallet, L Lapierre, ...
Microwave engineering Europe, 2002
262002
A new nonlinear HEMT model for AlGaN/GaN switch applications
G Callet, J Faraj, O Jardel, C Charbonniaud, JC Jacquet, T Reveyrand, ...
International journal of microwave and wireless technologies 2 (3-4), 283-291, 2010
252010
Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band
J Chéron, M Campovecchio, D Barataud, T Reveyrand, M Stanislawiak, ...
2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012
222012
Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process
O Jardel, G Callet, J Dufraisse, M Piazza, N Sarazin, E Chartier, M Oualli, ...
International Journal of Microwave and Wireless Technologies 3 (3), 301-309, 2011
212011
Experimental study on effect of second-harmonic injection at input of classes F and F− 1 GaN power amplifiers
A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ...
Electronics letters 46 (8), 570-572, 2010
212010
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
T Reveyrand, W Ciccognani, G Ghione, O Jardel, E Limiti, A Serino, ...
International Journal of Microwave and Wireless Technologies 2 (1), 51-61, 2010
212010
Simulation and measurement-based X-parameter models for power amplifiers with envelope tracking
H Jang, A Zai, T Reveyrand, P Roblin, Z Popovic, DE Root
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
182013
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