| Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling M Poljak, V Jovanovic, D Grgec, T Suligoj IEEE transactions on electron devices 59 (6), 1636-1643, 2012 | 91 | 2012 |
| Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC M Dyndal, V Dao, P Allport, IA Tortajada, M Barbero, S Bhat, D Bortoletto, ... Journal of Instrumentation 15 (02), P02005, 2020 | 60 | 2020 |
| Improving bulk FinFET DC performance in comparison to SOI FinFET M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 86 (10), 2078-2085, 2009 | 58 | 2009 |
| Analytical models of front-and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs B Sviličić, V Jovanović, T Suligoj Solid-State Electronics 53 (5), 540-547, 2009 | 50 | 2009 |
| Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects M Poljak, T Suligoj Nano Research 9, 1723-1734, 2016 | 47 | 2016 |
| Horizontal current bipolar transistor with a single polysilicon region for improved high-frequency performance of BiCMOS ICs T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai IEEE Electron Device Letters 31 (6), 534-536, 2010 | 44 | 2010 |
| Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons M Poljak, EB Song, M Wang, T Suligoj, KL Wang IEEE transactions on electron devices 59 (12), 3231-3238, 2012 | 43 | 2012 |
| SOI vs. bulk FinFET: body doping and corner effects influence on device characteristics M Poljak, V Jovanovic, T Suligoj MELECON 2008-The 14th IEEE Mediterranean Electrotechnical Conference, 425-430, 2008 | 36 | 2008 |
| Ultra-high aspect-ratio FinFET technology V Jovanović, T Suligoj, M Poljak, Y Civale, LK Nanver Solid-state electronics 54 (9), 870-876, 2010 | 32 | 2010 |
| Suppression of corner effects in wide-channel triple-gate bulk FinFETs M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 87 (2), 192-199, 2010 | 30 | 2010 |
| Influence of substrate type and quality on carrier mobility in graphene nanoribbons M Poljak, T Suligoj, KL Wang Journal of applied physics 114 (5), 2013 | 27 | 2013 |
| Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC H Pernegger, P Allport, IA Tortajada, M Barbero, P Barrillon, I Berdalovic, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021 | 26 | 2021 |
| Double-emitter reduced-surface-field horizontal current bipolar transistor with 36 V breakdown integrated in BiCMOS at zero cost M Koričić, J Žilak, T Suligoj IEEE Electron Device Letters 36 (2), 90-92, 2014 | 25 | 2014 |
| Limits on thinning of boron layers with/without metal contacting in PureB Si (photo) diodes T Knežević, X Liu, E Hardeveld, T Suligoj, LK Nanver IEEE electron device letters 40 (6), 858-861, 2019 | 22 | 2019 |
| Horizontal current bipolar transistor and fabrication method T Suligoj, P Biljanovic, KL Wang US Patent 7,038,249, 2006 | 22 | 2006 |
| A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors I Berdalovic, M Poljak, T Suligoj Journal of applied physics 129 (6), 2021 | 21 | 2021 |
| Collector region design and optimization in horizontal current bipolar transistor (HCBT) T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 212-215, 2010 | 21 | 2010 |
| Technological constrains of bulk FinFET structure in comparison with SOI FinFET M Poljak, V Jovanovic, T Suligoj 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 20 | 2007 |
| A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor F Piro, P Allport, I Asensi, I Berdalovic, D Bortoletto, C Buttar, R Cardella, ... IEEE transactions on nuclear science 69 (6), 1299-1309, 2022 | 19 | 2022 |
| Fabrication of horizontal current bipolar transistor (HCBT) T Suligoj, M Koricic, P Biljanovic, KL Wang IEEE transactions on electron devices 50 (7), 1645-1651, 2003 | 18 | 2003 |
