Stefan Schulz

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Eoin O'ReillyProfessor Emeritus, Tyndall National InstituteDirección de correo verificada de tyndall.ie
Miguel A. CaroSenior Scientist & Academy of Finland Research Fellow, Aalto UniversityDirección de correo verificada de aalto.fi
Philip DawsonUniversity of ManchesterDirección de correo verificada de manchester.ac.uk
Colin HumphreysQueen Mary University of LondonDirección de correo verificada de qmul.ac.uk
Oliver MarquardtPaul-Drude-Institut fuer Festkörperelektronik BerlinDirección de correo verificada de pdi-berlin.de
Saroj Kanta PatraR&D Engineer at OSRAMDirección de correo verificada de ams-osram.com
Danny SutherlandUniversity of ManchesterDirección de correo verificada de manchester.ac.uk
James Thomas GriffithsResearch associate, University of CambridgeDirección de correo verificada de cam.ac.uk
Frank JahnkeProfessor for Theoretical Physics, University of Bremen, GermanyDirección de correo verificada de uni-bremen.de
Tongtong ZhuUniversity of CambridgeDirección de correo verificada de cam.ac.uk
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Dirección de correo verificada de c2n.upsaclay.fr
Matthew J. DaviesAttolight AGDirección de correo verificada de attolight.com
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordDirección de correo verificada de physics.ox.ac.uk
Tomas L. MartinAssociate Professor in Materials Physics, Department of Physics, University of BristolDirección de correo verificada de bristol.ac.uk
Paul BagotUniversity of OxfordDirección de correo verificada de materials.ox.ac.uk
Michael P. MoodyDepartment of Materials, University of OxfordDirección de correo verificada de materials.ox.ac.uk
Daniel MouradR&D Life Science Mass Spectrometry, Thermo Fisher Scientific, BremenDirección de correo verificada de thermofisher.com
Peter J ParbrookStokes Professor of Nitride Materials, University College CorkDirección de correo verificada de tyndall.ie
B. CorbettTyndallDirección de correo verificada de tyndall.ie
Sorcha B HealyMicrosoftDirección de correo verificada de microsoft.com

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Stefan Schulz

Senior Staff Researcher, Tyndall National Institute

Dirección de correo verificada de tyndall.ie

Solid State Theory Semiconductor Physics Nanostructures III-Nitrides


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells S Schulz, MA Caro, C Coughlan, EP O'Reilly Physical Review B 91, 035439, 2015	146	2015
Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra S Schulz, S Schumacher, G Czycholl Physical Review B 73 (24), 245327, 2006	143	2006
Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides MA Caro, S Schulz, EP O’Reilly Physical Review B 88 (21), 214103, 2013	135	2013
Theory of reduced built-in polarization field in nitride-based quantum dots S Schulz, EP O’Reilly Physical Review B 82 (3), 033411, 2010	94	2010
Tight-binding model for semiconductor nanostructures S Schulz, G Czycholl Physical Review B 72 (16), 165317, 2005	92	2005
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys Journal of Applied Physics 119 (18), 181505, 2016	81	2016
Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly Applied Physics Express 6, 121001, 2013	79	2013
A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots O Marquardt, D Mourad, S Schulz, T Hickel, G Czycholl, J Neugebauer Arxiv preprint arXiv:0811.1461, 2008	74	2008
Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots S Schulz, MA Caro, EP O’Reilly, O Marquardt Physical Review B 84 (12), 125312, 2011	73	2011
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ... Physical Review B 92 (23), 235419, 2015	71	2015
Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots N Baer, S Schulz, P Gartner, S Schumacher, G Czycholl, F Jahnke Physical Review B 76 (7), 075310, 2007	68	2007
Optical properties of self-organized wurtzite InN∕ GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation N Baer, S Schulz, S Schumacher, P Gartner, G Czycholl, F Jahnke Applied Physics Letters 87 (23), 2005	66	2005
Band gap bowing and optical polarization switching in Al Ga N alloys C Coughlan, S Schulz, MA Caro, EP O'Reilly physica status solidi (b) 252 (5), 879-884, 2015	61	2015
Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides MA Caro, S Schulz, EP O’Reilly Physical Review B 86 (1), 014117, 2012	55	2012
Polarization fields in nitride-based quantum dots grown on nonpolar substrates S Schulz, A Berube, EP O’Reilly Physical Review B 79 (8), 081401, 2009	55	2009
Comparison of stress and total energy methods for calculation of elastic properties of semiconductors MA Caro, S Schulz, EP O’Reilly Journal of Physics: Condensed Matter 25 (2), 025803, 2012	53	2012
Electronic and optical properties of nonpolar a-plane GaN quantum wells S Schulz, TJ Badcock, MA Moram, P Dawson, MJ Kappers, ... Physical Review B 82 (12), 125318, 2010	50	2010
Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure S Schulz, S Schumacher, G Czycholl The European Physical Journal B 64, 51-60, 2008	49	2008
Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory MA Caro, S Schulz, EP O'Reilly Physical Review B 91 (7), 075203, 2015	48	2015
A generalized plane-wave formulation of k· p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures O Marquardt, S Boeck, C Freysoldt, T Hickel, S Schulz, J Neugebauer, ... Computational materials science 95, 280-287, 2014	47	2014

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