Francisco Jiménez-Molinos
Francisco Jiménez-Molinos
Verified email at - Homepage
Cited by
Cited by
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 144505, 2013
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 122108, 2006
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
: a physical model for RRAM devices simulation
MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza
Journal of Computational Electronics 16 (4), 1095-1120, 2017
A new compact model for bipolar rrams based on truncated-cone conductive filaments—a verilog-a approach
G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñé, S Long, ...
Semiconductor Science and Technology 31 (11), 115013, 2016
A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan
IEEE, 2015
A comprehensive analysis on progressive reset transitions in RRAMs
MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ...
Journal of Physics D: Applied Physics 47 (20), 205102, 2014
Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
F Gamiz, F Jimenez-Molinos, JB Roldan, P Cartujo-Cassinello
Applied physics letters 80 (20), 3835-3837, 2002
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors
R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ...
arXiv preprint arXiv:1702.01533, 2017
Hole transport in DGSOI devices: Orientation and silicon thickness effects
L Donetti, F Gámiz, N Rodrı, F Jiménez-Molinos, JB Roldán
Solid-state electronics 54 (2), 191-195, 2010
Coulomb scattering in high- gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
F Jiménez-Molinos, F Gámiz, L Donetti
Journal of Applied Physics 104 (6), 063704, 2008
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
The system can't perform the operation now. Try again later.
Articles 1–20