| Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ... Journal of Applied Physics 86 (12), 6854-6863, 1999 | 141 | 1999 |
| Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures A Palma, A Godoy, JA Jimenez-Tejada, JE Carceller, ... Physical Review B 56 (15), 9565, 1997 | 140 | 1997 |
| Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gamiz, J Banqueri, JA Lopez-Villanueva Journal of Applied Physics 90 (7), 3396-3404, 2001 | 114 | 2001 |
| Design and characterization of a low thermal drift capacitive humidity sensor by inkjet-printing A Rivadeneyra, J Fernández-Salmerón, M Agudo, JA López-Villanueva, ... Sensors and Actuators B: Chemical 195, 123-131, 2014 | 109 | 2014 |
| A comprehensive model for Coulomb scattering in inversion layers F Gámiz, JA López‐Villanueva, JA Jiménez‐Tejada, I Melchor, A Palma Journal of applied physics 75 (2), 924-934, 1994 | 99 | 1994 |
| Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998 | 98 | 1998 |
| Effects of the inversion-layer centroid on the performance of double-gate MOSFETs JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ... IEEE Transactions on Electron Devices 47 (1), 141-146, 2000 | 97 | 2000 |
| Evaluation of a low-cost commercial mosfet as radiation dosimeter LJ Asensio, MA Carvajal, JA Lopez-Villanueva, M Vilches, AM Lallena, ... Sensors and Actuators A: Physical 125 (2), 288-295, 2006 | 95 | 2006 |
| Effects of the inversion layer centroid on MOSFET behavior JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ... IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997 | 87 | 1997 |
| Direct and trap-assisted elastic tunneling through ultrathin gate oxides F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva Journal of Applied Physics 91 (8), 5116-5124, 2002 | 82 | 2002 |
| Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ... Journal of Applied Physics 89 (3), 1764-1770, 2001 | 79 | 2001 |
| Universality of electron mobility curves in MOSFETs: A Monte Carlo study F Gamiz, JA Lopez-Villanueva, J Banqueri, JE Carceller, P Cartujo IEEE transactions on electron devices 42 (2), 258-265, 1995 | 73 | 1995 |
| A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller Journal of applied physics 80 (9), 5121-5128, 1996 | 69 | 1996 |
| Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller IEEE Transactions on Electron Devices 44 (5), 841-846, 1997 | 63 | 1997 |
| Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ... Journal of applied physics 86 (11), 6269-6275, 1999 | 60 | 1999 |
| A simple subthreshold swing model for short channel MOSFETs A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz Solid-State Electronics 45 (3), 391-397, 2001 | 59 | 2001 |
| Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory S Rodrıguez, JA López-Villanueva, I Melchor, JE Carceller Journal of applied physics 86 (1), 438-444, 1999 | 57 | 1999 |
| Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas JA Lo, I Melchor, P Cartujo, JE Carceller Physical Review B 48 (3), 1626, 1993 | 54 | 1993 |
| Printed electrodes structures as capacitive humidity sensors: A comparison A Rivadeneyra, J Fernández-Salmerón, M Agudo-Acemel, ... Sensors and Actuators A: Physical 244, 56-65, 2016 | 50 | 2016 |
| A novel electrode structure compared with interdigitated electrodes as capacitive sensor A Rivadeneyra, J Fernández-Salmerón, J Banqueri, JA López-Villanueva, ... Sensors and Actuators B: Chemical 204, 552-560, 2014 | 50 | 2014 |
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
